کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5461168 | 1516184 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN Effect of AlN interlayer on the impurity incorporation of GaN film grown on sputtered AlN](/preview/png/5461168.png)
چکیده انگلیسی
We investigated the influence of AlN interlayer with varied V/III ratio on the impurity incorporation of GaN films grown on sputtered AlN layer by metal organic chemical vapor deposition (MOCVD). It is found that the V/III ratio of AlN interlayer significantly influences on the growth mode and leads different impurity distribution and electron properties. In the case of AlN interlayer with an optimized V/III ratio, incorporation of oxygen impurity in GaN epitaxial films is suppressed. Leading to the GaN film shows a high sheet resistivity. However, at a lower V/III ratio, an unexpected three-dimensional growth mode plays dominant role. While at a higher V/III ratio, the GaN polarity would invert to N-polar. Both these two situations would deteriorate the electrical properties of GaN film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 710, 5 July 2017, Pages 756-761
Journal: Journal of Alloys and Compounds - Volume 710, 5 July 2017, Pages 756-761
نویسندگان
Zhibin Chen, Jincheng Zhang, Shengrui Xu, Junshuai Xue, Jiaduo Zhu, Teng Jiang, Yue Hao,