کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5461354 | 1516198 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Resistive random access memories fabricated by using solution-processed AlZnSnO semiconductor films and indium ball electrodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Resistive random access memories (ReRAMs) using solution-processed AlZnSnO (AZTO) oxide semiconductor films as resistive switching layers were fabricated. Electrodes were prepared by applying Ag paste or by pressing indium balls onto the AZTO surface. Vacuum processes were not required. The resistive switching behavior was not found for the ReRAM using a Ag paste electrode. However, a significant resistive switching characteristic could be obtained when using an In ball as the electrode. In addition, by adjusting compliance current from 80 mA to 20 mA, a stable resistance difference between high and low resistance state of 1839 Ω could be obtained over 500 operations. The ReRAM also exhibited good data retention capability and read disturb immunity for at least 103 s. Physical mechanisms of current conduction and resistance switching behavior were also investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 696, 5 March 2017, Pages 697-700
Journal: Journal of Alloys and Compounds - Volume 696, 5 March 2017, Pages 697-700
نویسندگان
Chih-Chieh Hsu, Yu-Ting Chen, Che-Chang Tsao,