کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5461431 | 1516199 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bi3+-doped CH3NH3PbI3: Red-shifting absorption edge and longer charge carrier lifetime
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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![عکس صفحه اول مقاله: Bi3+-doped CH3NH3PbI3: Red-shifting absorption edge and longer charge carrier lifetime Bi3+-doped CH3NH3PbI3: Red-shifting absorption edge and longer charge carrier lifetime](/preview/png/5461431.png)
چکیده انگلیسی
Ion doping is an effective approach to improve the properties of hybrid perovskite CH3NH3PbI3, such as chemical stability and solar absorption. Here Bi3+-doped CH3NH3PbI3 was synthesized via cooling crystallization process in aqueous solution. Along with the Bi3+ doping, the bandgap of CH3NH3PbI3 could be significantly narrowed, by the maximum value of 140 meV at the optimal doping level of 1.6 M %. Transient photovoltage measurement (TPV) revealed the Bi3+-doped CH3NH3PbI3 could achieve a charge carrier lifetime of 280 μs, which was almost twice longer than that of pristine CH3NH3PbI3 (157 μs). The prolonged carrier lifetime of Bi3+-doped CH3NH3PbI3 was supposed to be attributed to its lower packing factor (PF), which was caused by the CH3NH3+ vacancy (VMA) after doping This work provides a new approach to tune the band gap and charge carrier lifetime of the hybrid perovskite CH3NH3PbI3, which should be promising to further improve the performance of perovskite-based photovoltaic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 695, 25 February 2017, Pages 555-560
Journal: Journal of Alloys and Compounds - Volume 695, 25 February 2017, Pages 555-560
نویسندگان
Ruiqi Wang, Xian Zhang, Jianqiao He, Cheng Ma, Li Xu, Peng Sheng, Fuqiang Huang,