Temperature dependent electron transport properties of degenerate SnO2 thin films

The degenerate SnO2 thin films were deposited on n-type Si substrates by using the magnetron sputtering system. The conductivity and Hall effect measurements of the films were carried out as a function of temperature. The measured temperature dependent conductivity of SnO2 has been analyzed using a comprehensive conductivity model including both the electron-electron scattering and the weak localizations effects. The characteristic parameters describing the conductivity such as the electron-electron scattering coefficient and the weak localization coefficient were determined both experimentally and theoretically, and their values were also discussed within the model describing the conductivity in degenerate SnO2 films with n > 1019 cm−3.