Sb2S3 thin films prepared by vulcanizing evaporated metallic precursors

In this study, antimony sulfide (Sb2S3) thin films had been grown on Mo-coated glass substrate by evaporating metallic Sb film and subsequent annealing in nitrogen/sulfur (N2/H2S) environment. The effects of annealing temperature on phases, morphologies and compositions of thin films and corresponding devices were investigated. It was found that the metallic Sb layer cannot be sulfured completely at annealing temperature of 320 °C, while amount of the formed Sb2S3 loss occured at annealing temperature beyond 450 °C. The devices with absorber annealed at 400 °C exhibited the best performance as the film possessed improved morphology and phase structure. This study provides new approach to fabricate Sb2S3 thin film and possibilities for large scale industrial application of Sb2S3 thin film solar cells.