Enhanced dielectric properties in (In, Nb) co-doped BaTiO3 ceramics

BaTi1-x(In0.5Nb0.5)xO3 (x = 0, 0.01, and 0.03) ceramic samples were prepared using the conventional solid-state reaction method. The dielectric properties of these samples were investigated as a function of temperature (300 K ≤ T ≤ 700 K) and frequency (102 Hz ≤ f ≤ 106 Hz). Great enhancement of dielectric constant in the dual doped samples was found. Defect diploles of [NbTi5+-Ti3+] and [NbTi5+-InTi3+] were suggest to account for the enhancement of dielectric constant.