Magnetoresistance across metal-insulator transition in VO2 micro crystals

We report the effect of magnetic field (H) on the insulator-metal (IM) transition in VO2 microcrystals. We observed that the temperature coefficient of resistance (TCR) in the monoclinic phase (T < 338 K) varies from negative to positive values on the application of external magnetic field, and follows ∼H2 behavior. The magneto-resistance (MR) of VO2 microcrystals also varies from small negative to positive value across the transition temperature. The presented aspects are relevant for understanding the influence of magnetic field on the electrical resistance of functional oxides across phase transition.