کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463609 | 1517199 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Sulfurization and annealing effects on thermally evaporated CZTS films
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Sulfurization and annealing effects on thermally evaporated CZTS films Sulfurization and annealing effects on thermally evaporated CZTS films](/preview/png/5463609.png)
چکیده انگلیسی
Thermally evaporated Cu2Zn1.5Sn1.2S4.4 (CZTS) films are annealed and sulfurized at different temperatures to study the structural modifications. The kesterite phase formation and phase purity of the CZTS films are compared and confirmed by X-ray diffraction and Raman spectroscopic technique. Surface oxidation state of the elements in the sulfurized film is studied by XPS. The calculated optical band gap of the 550 °C sulfurized CZTS film is found to be 1.56 eV; however getting modified due to annealing and sulfurization. The carrier concentration, resistance and mobility of the sulfurized films are found to be 2.8Ã1014 cmâ3, 2686 Ω/square and 8.2 cm2Vâ1sâ1 respectively and the conduction type is p-type. This study sheds light on the effect of annealing and sulfurization on various phase-modifications and the light-harvesting capability of CZTS absorber layers for solar cell applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 189, 15 February 2017, Pages 110-113
Journal: Materials Letters - Volume 189, 15 February 2017, Pages 110-113
نویسندگان
Chinnaiyah Sripan, Vinod E. Madhavan, Annamraju Kasi Viswanath, R. Ganesan,