کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5463617 1517199 2017 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Near-ultraviolet electroluminescence from ZnO-based light-emitting diodes with n-ZnO nanorod/p-GaN direct-bonding heterojunction structure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Near-ultraviolet electroluminescence from ZnO-based light-emitting diodes with n-ZnO nanorod/p-GaN direct-bonding heterojunction structure
چکیده انگلیسی
We demonstrate the fabrication and characterization of ZnO nanorods (NRs)/GaN-based heterojunction direct-bonding light-emitting diodes (LEDs) by using Al-doped ZnO (AZO) conductive glass acting as a substrate for the first time. Under the forward bias, the n-ZnO/p-GaN heterojunction can display a pure near-ultraviolet electroluminescence (EL) emission located at 390 nm, while the deep-level (DL) emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively according to PL results and energy band diagram.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 189, 15 February 2017, Pages 144-147
نویسندگان
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