کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5463732 | 1517202 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Design and fabrication of quaternary Co1âxâyZnxCdyS thin film photoelectrochemical (PEC) cell
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Quaternary semiconductor thin films are an emerging material for the development of photoelectrochemical (PEC) cells. Here, we are presenting the photoelectrochemical properties of Co1âxâyZnxCdyS thin films. Chemical synthesis of quaternary Co1âxâyZnxCdyS thin films has been reported previously. As-deposited thin films were studied for morphological features using atomic force microscopy (AFM). The photoelectrochemical (PEC) properties of chemically deposited Co1âxâyZnxCdyS thin films have been studied. PEC cell of configuration Co1âxâyZnxCdyS/0.5Â M KCl/C was fabricated to study the various PEC parameters in dark and under illumination. The maximum efficiency and fill factor were found to be 1.06% and 0.39 respectively for composition x=y=0.15.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 186, 1 January 2017, Pages 247-251
Journal: Materials Letters - Volume 186, 1 January 2017, Pages 247-251
نویسندگان
S.S. Kamble, A. Sikora, G.T. Chavan, S.T. Pawar, N.N. Maldar, L.P. Deshmukh,