کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5464347 | 1517425 | 2017 | 30 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Graphene on cubic-SiC
ترجمه فارسی عنوان
گرافن در مکعب سی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
The outstanding properties of graphene make it a top candidate for replacing silicon in future electronic devices. However, for technological applications, graphene must be synthesized on the surface of wide-gap semiconductors. In this review, we focus on graphene synthesized on single-crystalline cubic-SiC thin films epitaxially grown on standard silicon wafers. These low-cost substrates are commercially available and fully compatible with existing silicon technologies. The results obtained in recent years demonstrate that few-layer graphene synthesized on cubic-SiC substrates possesses the atomic structure and electronic properties of quasi-free-standing graphene. However, according to data obtained by various techniques, few-layer graphene on cubic-SiC consists of nanodomains connected to one another through nanodomain boundaries. After optimization of the preparation procedures, such a nanostructured graphene overlayer can represent a very promising system for the development of new graphene-based electronic devices. In particular, recent works demonstrate that continuous few-layer graphene with self-aligned nanodomain boundaries can be synthesized on vicinal SiC(0 0 1) substrates. Electrical measurements show the opening of a transport gap in nanostructured trilayer graphene synthesized on SiC/2°-off Si(0 0 1) wafers. This development may lead to new tunable electronic nanostructures made from graphene on cubic-SiC, opening up opportunities for a wide range of applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Materials Science - Volume 89, August 2017, Pages 1-30
Journal: Progress in Materials Science - Volume 89, August 2017, Pages 1-30
نویسندگان
Alexander N. Chaika, Victor Yu. Aristov, Olga V. Molodtsova,