Influence of ZnTe intrinsic layer on the performance of p-ZnTe/n-Si heterojunctions

The ZnTe/Si p-i-n heterojunctions were fabricated successfully by using direct-current (DC) magnetron sputtering. The effects of an intrinsic ZnTe layer and annealing treatment on the properties of p-i-n heterojunctions were investigated. The results showed that the crystallinity of the ZnTe films was improved after annealing treatment. Structural analysis revealed that the ZnTe films were zinc blende and highly oriented along the (1 1 1) direction. The optical band-gap is 2.20 eV and 2.25 eV for p-ZnTe and i-ZnTe films. The heterojunction with an intrinsic layer and annealing treatment showed a good rectifying behavior.