کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546509 1450485 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots
چکیده انگلیسی

A low-temperature micro-photoluminescence (μ-PL) investigation of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field is reported. It is demonstrated that the QDs PL signal could be increased several times by altering the external and/or the internal electric field. The internal field in the vicinity of the dots could be altered by means of an additional infra-red laser. We propose a model, which is based on an essentially faster lateral transport of the charge carriers achieved in an external electric field. Consequently, also the capture probability into the dots and subsequently the dot luminescence is also enhanced. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issues 3–4, March–April 2008, Pages 331–334
نویسندگان
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