کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546521 1450485 2008 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impurity states in a spherical GaAs–Ga1-x1-x AlxxAs quantum dots: Effects of hydrostatic pressure
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Impurity states in a spherical GaAs–Ga1-x1-x AlxxAs quantum dots: Effects of hydrostatic pressure
چکیده انگلیسی

We calculated the binding energies of shallow donors and acceptors in a spherical GaAs–Ga1-x1-xAlxxAs quantum dot under isotropic hydrostatic pressure for both a finite and an infinitely high barrier. We use a variational approach within the effective mass approximation. The binding energy is computed as a function of hydrostatic pressure, the dot sizes and the impurity position. The results show that the impurity binding energy increases with the pressure for any position of the impurity. We have also found that the binding energy depends on the location of the impurity and the pressure effects are less pronounced for impurities on the edge.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 39, Issues 3–4, March–April 2008, Pages 383–386
نویسندگان
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