Novel structure of GaAs-based interdigital-gated HEMT plasma devices for solid-state THz wave amplifier

Theoretical analysis of potential distribution in the interdigital-gated high electron mobility transistor (HEMT) plasma wave device was carried out. The dc I–V characteristics of capacitively coupled interdigital structure showed that uniformity of electric field under the interdigital gates was improved compared to the dc-connected interdigital gate structure. Admittance measurements of capacitively coupled interdigital gate structure in the microwave region of 10–40 GHz showed the conductance modulation by drain–source voltage. These results indicate the existence of plasma wave interactions.