کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546659 1450489 2007 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Two-dimensional subthreshold analysis of sub-micron GaN MESFET
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Two-dimensional subthreshold analysis of sub-micron GaN MESFET
چکیده انگلیسی

An analytical two-dimensional (2D) model to accurately predict the channel potential and electric field distribution in sub-micron GaN MESFET operating in the sub-threshold regime based on (2D) analytical solution of Poisson's equation using superposition principle is presented. The results so obtained for channel potential, electric field, threshold voltage, etc are compared with simulated data using ATLAS 2D device simulator. The model is then extended to predict the current voltage characteristics and the effects of drain induced barrier lowering (DIBL) on the performance. Furthermore, the sub-threshold output characteristics of the device are also interpreted qualitatively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 38, Issues 4–5, April–May 2007, Pages 547–555
نویسندگان
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