کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5467579 | 1398939 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of highly-charged 209Bi33+ irradiation on structure and optoelectric characteristics of GaN epilayer
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The microstructure and optoelectric properties of GaN epilayer irradiated by highly-charged 209Bi33+ to different fluences are investigated by means of atomic force microscopy, X-ray photoelectron spectroscopy, Raman scattering spectroscopy and photoluminescence spectroscopy. After Bi33+ irradiation, AFM observation shows the irradiated GaN surface is a swelling and swelling rate nonlinearly increases with increasing ions fluence. XPS analysis reveals the relative content of Ga-N bond reduces and Ga-O, Ga-Ga bonds have been produced as the fluence increases. Raman scattering spectra display the thickness of surface depletion layer increases, free carrier concentration and its mobility decrease generally with an increase in ions fluence. Furthermore, the length of Ga-N bond shortens and lattices experience compressive stress with increasing ions fluence are observed from Raman spectra. Room temperature PL spectra reflect the intensity of yellow luminescence (YL) emission increases and its peak has a blueshift after 1.061Â ÃÂ 1012 Bi33+/cm2 irradiation. Moreover, as the temperature rises, the thermal quenching of YL occurs and its peak position first exhibits a blueshift and then a redshift. Results may be served as a useful reference for HCI to be used in semiconductor fields.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 571-577
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 406, Part B, 1 September 2017, Pages 571-577
نویسندگان
L.Q. Zhang, C.H. Zhang, C.L. Xu, J.J. Li, Y.T. Yang, Y.Z. Ma, J.Y. Li, H.P. Liu, Z.N. Ding, T.X. Yan, Y. Song,