کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
546831 1450476 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A curvature-compensated CMOS bandgap with negative feedback technique
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
A curvature-compensated CMOS bandgap with negative feedback technique
چکیده انگلیسی

This paper propose a novel high-order curvature-corrected CMOS bandgap reference (BGR) utilizing the negative feedback structure. The innovative negative feedback bandgap core not only compensates the exponential nonlinearity of VBE but also improves the power supply rejection ratio (PSRR) and line regulation. The proposed BGR is analyzed and implemented in 0.35-μm CMOS process. Experimental results of the BGR indicate that a minimum temperature coefficient (TC) of 13 ppm/°C @−40 °C to 180 °C, a PSRR of −64 dB @ 100 Hz, and the 5.2 uV/V line regulation (LNR) from 3 V to 3.6 V supply voltage at room temperature. The active area of the presented BGR is 133 μm×300 μm.

In this paper, we proposed a new circuit configuration to improve a BGR׳s TC as well as the PSRR. The circuit adopt a negative feedback in the first-order voltage reference core area for a curvature corrected compensation and high PSRR. Till now, no bandgap voltage reference based on this technique has proposed in any paper.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 52, June 2016, Pages 104–110
نویسندگان
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