کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5468473 | 1518936 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination of band offset in MgO/InP heterostructure by X-ray photoelectron spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
X-ray photoelectron spectroscopy was used to measure the valence-band offset (ÎEV) of MgO/InP heterostructure. Two sets of core level pairs in the MgO/InP system were used to demonstrate the accuracy of the calculation, the ÎEV value was the same (5.33 ± 0.15 eV) when using the In 3d3/2, Mg 2p pair and In 3d5/2, Mg 2p pair, indicating our calculations are accuracy and reasonable. Taking the band gaps of 7.83 eV for MgO and 1.34 eV for InP into consideration, a type-I band alignment of MgO/InP heterostructure was obtained with conduction band offset (CBO) of 1.16 ± 0.15 eV for two sets of core level pairs, indicating a nested interface band alignment heterostructure was prepared. The accurate determination of the band alignment of MgO/InP has a significant impact on the performance of InP-based devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 134, December 2016, Pages 136-140
Journal: Vacuum - Volume 134, December 2016, Pages 136-140
نویسندگان
Xue Liu, Xiaohua Wang, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Yongfeng Li, Bin Yao, Xiaohui Ma, Haizhu Wang, Zhipeng Wei,