Modeling of carbon nanotube field-effect transistor with nanowelding treatment

An efficient and universal numerical model of carbon nanotube (CN) field-effect transistor (FET) with nanowelding treatment has been developed. In this model, an analytic expression of carrier distribution of intrinsic CN is incorporated into the modified Poisson equation where a parameter η is adopted to account for the effect of ultrasonic nanowelding on the CN/metal contact. The electrostatic potential of CN is derived by Newton–Raphson iteration which makes the model efficient for the CNFET simulation. The current–voltage characteristics are calculated using the Landauer formalism. The device performance is investigated in detail by scaling power supply voltage, insulator thickness and CN diameter.