کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
548044 | 872089 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering](/preview/png/548044.png)
چکیده انگلیسی
Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucleation. Random nucleation was further suppressed by a two-stage deposition process. Ge nucleation on oxide by chemical vapor deposition was enhanced by coating the oxide surface with an organic self-assembled monolayer (SAM) and by the nanoimprinted surface relief. The nanoimprinted surface relief also provides long-range order in the SAM.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 12, December 2006, Pages 1481–1485
Journal: Microelectronics Journal - Volume 37, Issue 12, December 2006, Pages 1481–1485
نویسندگان
T.I. Kamins, A.A. Yasseri, S. Sharma, R.F.W. Pease, Q. Xia, S.Y. Chou,