کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5488997 | 1399593 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical properties and oxygen sensing ability of Zn1âxCoxO epitaxial films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
While Co-doped ZnO has been much studied from the viewpoint of dilute magnetic semiconductors, we offer a new perspective by shedding light on the oxygen sensing ability of Co-doped ZnO. Epitaxial Zn1âxCoxO (x = 0.0,0.05,0.1,0.15) thin films are grown on α-Al2O3 (0001) by pulsed laser deposition. We successfully optimize growth conditions of Zn1âxCoxO films to prevent Co clustering and also to obtain high crystallinity. As Co content (x) increases, the c-axis lattice constant of Zn1âxCoxO films linearly increases. We particularly pay attention to the effect of oxygen annealing and dynamic response under reduction gas (2% hydrogen in Ar) and oxygen gas environment in electrical properties of Zn1âxCoxO. It is shown that the resistance of Zn0.85Co0.15O changes more than two orders of magnitude reversibly as it is reduced and oxidized alternatively. Thus, the present work demonstrates a potential of Zn1âxCoxO as an oxygen sensor at high temperatures. Oxygen (oxygen vacancy and/or oxygen interstitial) and Co in the system appear to play a role cooperatively in determining the electrical properties of Zn1âxCoxO.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1627-1630
Journal: Current Applied Physics - Volume 16, Issue 12, December 2016, Pages 1627-1630
نویسندگان
Hyo-Jin Lee, Yong-Woo Lee, T.Y. Koo, Yoon Hee Jeong,