کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489222 | 1524355 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
A numerical simulation study was carried out to examine the transport phenomena occurring during the Top-Seeded Solution Growth (TSSG) process of SiC. The simulation model includes the contributions of radiative and conductive heat transfer in the furnace, mass transfer and fluid flow in the melt, and the induced electric and magnetic fields. Results show that the induced Lorentz force is dominant in the melt compared with that of buoyancy. At the relatively low coil frequencies, the effect of the Lorentz force on the melt flow is significant, and the corresponding flow patterns loose their axisymmetry and become almost fully disturbed. However, at the relatively higher frequency values, the flow is steady and the flow patterns remain axisymmetric.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 474, 15 September 2017, Pages 50-54
Journal: Journal of Crystal Growth - Volume 474, 15 September 2017, Pages 50-54
نویسندگان
Takuya Yamamoto, Nikhil Adkar, Yasunori Okano, Toru Ujihara, Sadik Dost,