کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489239 | 1524355 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling](/preview/png/5489239.png)
چکیده انگلیسی
Adaptive phase field modeling is used in order to model the formation mechanism of a silicon faceted interface in three dimensions. We investigate the faceting condition for equilibrium shapes and dynamic situations. In this study, we propose a new anisotropic function of surface energy for the phase-field simulations in three-dimension, and negative stiffness is further considered. The morphological evolutions are presented and compare well with experimental findings. The growth mechanism is further discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 474, 15 September 2017, Pages 166-170
Journal: Journal of Crystal Growth - Volume 474, 15 September 2017, Pages 166-170
نویسندگان
G.Y. Chen, C.W. Lan,