کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489290 | 1524354 | 2017 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Selective etching reveals the migration and evolution of dislocations in annealed Cd1-xZnxTe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Selective etching reveals the migration and evolution of dislocations in annealed Cd1-xZnxTe Selective etching reveals the migration and evolution of dislocations in annealed Cd1-xZnxTe](/preview/png/5489290.png)
چکیده انگلیسی
We report our investigation of the influence of annealing on the behavior of dislocations in CdTe and cadmium zinc telluride (CZT) crystals. The results are discussed taking into account the tellurium diffusion from inclusions. The effect of thermal treatment on the defect structure of CZT was studied by selective etching. Bissoli's etchant was used for revealing dislocation loops, inclusions and other defects as the most effective for (1Â 1Â 1)-oriented CZT surface. The results of selective etching were evaluated by IR microscopy and AFM for a series of systematically annealed CdTe and CZT single crystals. We studied the infrequent effect of the inclusions tracking near star-like dislocation-specific locations after post-growth annealing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 475, 1 October 2017, Pages 26-32
Journal: Journal of Crystal Growth - Volume 475, 1 October 2017, Pages 26-32
نویسندگان
O.O. Korovyanko, L.P. Shcherbak, I.Y. Nakonechnyi, Z.I. Zakharuk, P.M. Fochuk, A.E. Bolotnikov, R.B. James,