کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489305 | 1524354 | 2017 | 27 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(0Â 0Â 1) with a pyramid structure consisting of {1Â 1Â 1} facets
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
BaSi2 films were fabricated on textured Si(0Â 0Â 1) substrates that consisted of {1Â 1Â 1} facets using molecular beam epitaxy. The light-trapping effect of these films and their performance when incorporated into solar cells were measured. X-ray diffraction and reflectivity measurements showed that the BaSi2 films were grown epitaxially on the textured Si(0Â 0Â 1) substrate and confirmed the light-trapping effect. The critical thickness over which BaSi2 relaxes increased from approximately 50 to 100Â nm when comparing the BaSi2 films on a flat Si(1Â 1Â 1) substrate and the textured substrate, respectively. p-BaSi2/n-Si solar cells were fabricated with varying BaSi2 layer thickness and with hole concentrations in the range between 2.0Â ÃÂ 1018 and 4.6Â ÃÂ 1018Â cmâ3. These cells exhibited a maximum energy conversion efficiency of 4.62% with an open-circuit voltage of 0.30Â V and a short-circuit current density of 27.6Â mA/cm2 when the p-BaSi2 layer was 75Â nm-thick. These results indicated that the use of BaSi2 films on textured Si(0Â 0Â 1) substrates in solar cells shows great promise.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 475, 1 October 2017, Pages 186-191
Journal: Journal of Crystal Growth - Volume 475, 1 October 2017, Pages 186-191
نویسندگان
Tianguo Deng, Kazuhiro Gotoh, Ryota Takabe, Zhihao Xu, Suguru Yachi, Yudai Yamashita, Kaoru Toko, Noritaka Usami, Takashi Suemasu,