Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method

The In-doped Cd0.9Mn0.1Te (CdMnTe:In) crystal was grown by the Travelling Heater Method. The crystallity of the CdMnTe:In wafers extracted from different part of the CdMnTe:In ingot was studied including the impurity contents, the Te inclusions and the Mn composition. The point defects in the CdMnTe:In wafers were revealed by the Photo-Induced Current Transient Spectroscopy (PICTS). The ionization energy, the capture cross-section and the concentration of the defect traps in different parts of the ingot were identified. The PICTS result showed the concentration of the VCd decreases from the top part to the tail part along the bulk while the concentration of A-center increase. The wafers from the middle part of the bulk were proved to have less deep level point defects compared to other parts of the crystal bulk, and had higher electronic performance with the resistivity up to 3.07 × 1010 Ω cm and the μτ value up to 1.45 × 10−3 cm2 V−1. The concentration of the deep level point defects plays an important role in the electrical properties, especially for the mobility-lifetime product.