کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489392 | 1524359 | 2017 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dislocation density and strain-relaxation in Ge1âxSnx layers grown on Ge/Si (0Â 0Â 1) by low-temperature molecular beam epitaxy
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The density and origin of dislocations in a variety of molecular-beam-epitaxy-(MBE)-grown Ge1âxSnx/Ge/Si (0Â 0Â 1) heterostructures, with Sn-content varying from 0.4 to 5.2%, have been investigated systematically by high resolution X-ray diffraction (HRXRD). In particular, using the approach due to Kaganer et al. (V.M. Kaganer et al., Phys. Rev. B 72, 045423 (2005)) for the first time to the Ge1âxSnx alloy, it is demonstrated that reliable estimates of both edge and screw dislocation densities can be obtained from HRXRD data. Based on the correlations of strain relaxation and dislocation densities of the alloy epilayers and the underlying Ge buffer layers, we observe that dislocations threading from the latter predominantly contribute to the strain relaxation of the former. Thus, Ge1âxSnx epilayers of sub-critical thicknesses can be made to relax significantly by growing them on partially-relaxed, relatively-thin Ge buffer layers. This may be promising for the realization of Ge1âxSnx epilayers with direct electronic band gap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 135-142
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 135-142
نویسندگان
Krista R. Khiangte, Jaswant S. Rathore, Vaibhav Sharma, Swagata Bhunia, Sudipta Das, Rajveer S. Fandan, Ravinder S. Pokharia, Apurba Laha, Suddhasatta Mahapatra,