کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489452 | 1524365 | 2017 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper, the influence of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of green InGaN/GaN light-emitting diodes (LEDs) is discussed. To investigate the effects of Si doping to the superlattice, green LEDs were also fabricated on undoped graded superlattice (unGSL). Furthermore, a conventional green InGaN/GaN LED without the superlattice (C-LED), emitting at a wavelength of 534Â nm, was also prepared as a reference. The current-voltage (I-V) curves for the C-LED and the unGSL-LED subjected to the ESD treatments at surge voltages from 2000 to 8000Â V showed a drastic increase in the leakage current. However, there was relatively small change in the I-V curves for the SiGSL-LED after the ESD treatments, even at the surge voltages of 6000 and 8000Â V. After the ESD treatment at a surge voltage of 8000Â V, the EL intensities for the C-LED, unGSL, and SiGSL, measured at a driving current of 120Â mA, were reduced by 55, 53, and 30%, respectively, compared to those of the as-fabricated LEDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 138-142
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 138-142
نویسندگان
Kwanjae Lee, Cheul-Ro Lee, Tae-Hoon Chung, Jinyoung Park, Jae-Young Leem, Kwang-Un Jeong, Jin Soo Kim,