کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5489452 1524365 2017 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Influences of graded superlattice on the electrostatic discharge characteristics of green InGaN/GaN light-emitting diodes
چکیده انگلیسی
In this paper, the influence of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of green InGaN/GaN light-emitting diodes (LEDs) is discussed. To investigate the effects of Si doping to the superlattice, green LEDs were also fabricated on undoped graded superlattice (unGSL). Furthermore, a conventional green InGaN/GaN LED without the superlattice (C-LED), emitting at a wavelength of 534 nm, was also prepared as a reference. The current-voltage (I-V) curves for the C-LED and the unGSL-LED subjected to the ESD treatments at surge voltages from 2000 to 8000 V showed a drastic increase in the leakage current. However, there was relatively small change in the I-V curves for the SiGSL-LED after the ESD treatments, even at the surge voltages of 6000 and 8000 V. After the ESD treatment at a surge voltage of 8000 V, the EL intensities for the C-LED, unGSL, and SiGSL, measured at a driving current of 120 mA, were reduced by 55, 53, and 30%, respectively, compared to those of the as-fabricated LEDs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 464, 15 April 2017, Pages 138-142
نویسندگان
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