کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489476 | 1524367 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructure analysis of IrO2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We have grown IrO2 thin films on TiO2(110) substrates to determine the pulsed laser deposition growth window for iridates. Relaxed IrO2 films were obtained at a growth temperature of 500 °C and background oxygen pressure of 100 m Torr; otherwise, either pure Ir metal films or evaporative Ir loss were observed. Although x-ray Φ-scan measurement indicated that the films were epitaxial, a distinct grain structure was seen by atomic force microscopy and transmission electron microscopy. The grain boundaries were found to limit the conductivity of films at low temperature. It appeared that strain relaxation leads to stacking faults at grain boundaries.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 24-28
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 24-28
نویسندگان
Xiuyi Hou, Ryota Takahashi, Takahisa Yamamoto, Mikk Lippmaa,