کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489478 | 1524367 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ferroelectric properties of highly c-oriented epitaxial Bi2WO6 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ferroelectric properties of highly c-oriented epitaxial Bi2WO6 thin films Ferroelectric properties of highly c-oriented epitaxial Bi2WO6 thin films](/preview/png/5489478.png)
چکیده انگلیسی
Bi2WO6 (BWO) thin films were epitaxially deposited onto single crystal Nb-doped SrTiO3 substrates via pulsed laser deposition (PLD). To control the growth mode of the BWO thin films, the deposition rate was varied from 0.01 to 0.4Â nm/pulse. The BWO thin films yielded an island growth mode during a rapid deposition rate of 0.4Â nm/pulse. On the other hand, a layer-by-layer growth mode was achieved with a low deposition rate of 0.01Â nm/pulse. We could obtain highly c-oriented epitaxial BWO thin films by means of the layer-by-layer mode. Piezoresponse force microscopy revealed that the highly c-oriented epitaxial BWO thin films possessed spontaneous polarizations that were perpendicular to the c-axis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 41-44
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 41-44
نویسندگان
Yoonho Ahn, Jong Yeog Son,