Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method

We report the growth of p-type As-doped, Cd-rich CdTe single crystals using metallic Cd as the solvent in the traveling-heater method. We investigate the growth process from Cd solution in terms of the solid-liquid interface shape and the effects of As incorporation on p-type doping. The resulting CdTe crystals have Cd-rich composition which enhances p-type doping. The As doping efficacy was measured for As concentrations by the combination of inductively coupled plasma mass spectrometry, capacitance-voltage measurements. The p-type doping concentration varied from 6 × 1015 to 8 × 1016 cm−3 with increasing As concentration, with an apparent doping limit just below 1017 cm−3.