کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489572 | 1524361 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition](/preview/png/5489572.png)
چکیده انگلیسی
Controlling the native carrier is essential for using Cu2O in devices such as solar cells. The origin of the native p-type carrier in Cu2O is thought to be copper vacancies (VCu). In this work, epitaxially grown Cu2O thin films were prepared by electrochemical deposition at a low temperature of 45 °C on a Pt (111) cathodic electrode. The sources of Cu and O for Cu2O were Cu2+ and OHâ in the electrolyte and the ion concentrations were changed to control the stoichiometry of deposition and the density of VCu. The density of ionized acceptors (NA+) in the Cu2O films was evaluated by the C-V properties measured with Schottky electrodes. NA+ did not depend on [Cu2+], whereas NA+ increased with increasing [OHâ] when [OHâ] was larger than 10â3 mol/L (electrolyte pH >11) with [Cu2+] fixed at 10â1 mol/L. The ion concentration dependence of NA+ and the dependence of the total cathodic current density revealed that the generation of VCu was affected by a complex combination of the ion concentrations and film growth rate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 245-248
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 245-248
نویسندگان
Atsushi Ashida, Shunsuke Sato, Takeshi Yoshimura, Norifumi Fujimura,