High-temperature growth and characterization of (Er,Yb):YAl3(BO3)4 single crystal layers

Er0.02Yb0.11Y0.87Al3(BO3)4 epitaxial layers were grown from K2Mo3O10 based fluxed melts using LPE technique. HT-SGDS grown YAl3(BO3)4 single crystals were used as substrates. Growth kinetics and micromorphology of (Er.Yb):YAl3(BO3)4 thin films were investigated.