Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall effect under pressure

Donor-deactivating defects above the equilibrium doping limit in GaAs:Te,Ge and GaAs:Te studied by annealing and Hall effect under pressure

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 468, 15 June 2017, Pages 433-438

T. Slupinski, D. Wasik, J. Przybytek,