کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489754 | 1524372 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nonstoichiometry and luminescent properties of ZnSe crystals grown from the melt at high pressures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
50Â mm diameter ZnSe crystals have been grown from the melt by a vertical Bridgman technique at 100Â atm argon pressure in a graphite crucible. 3D impurities concentration and nonstoichiometry mappings of the grown crystals have been defined by ICP-MS and a direct physic-chemical method, correspondingly. Photoluminescence mapping of the analyzed crystal has been done. It was found out that along the crystal height the nonstoichiometry changed from Se excess over stoichiometrical composition in the cone (bottom) part to Zn excess in the tail (upper) part passing through the stoichiometrical composition in the cylindrical part of the crystal. Metal impurities concentrated in the upper part of the crystal. The gas-forming impurities (H, C, O, N, F) had stochastic distribution but Cl impurity concentrated in the crystal peripheral part (near the crucible walls). It was found out that the as-grown crystal had a single wide PL peal with maximum of 583Â nm. A proposal about complex structure luminescent center based on Cl dopant an overstoichiometric Se has been made.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 331-336
Journal: Journal of Crystal Growth - Volume 457, 1 January 2017, Pages 331-336
نویسندگان
Tran Khanh, Elena Mozhevitina, Andrew Khomyakov, Roman Avetisov, Albert Davydov, Vladimir Chegnov, Vladimir Antonov, Svetlana Kobeleva, Nikolai Zhavoronkov, Igor Avetissov,