کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489834 | 1524373 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Chemical etching behavior of non-polar GaN sidewalls
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Chemical etching behavior of non-polar GaN sidewalls Chemical etching behavior of non-polar GaN sidewalls](/preview/png/5489834.png)
چکیده انگلیسی
Wet-chemical etching of non-polar GaN films can be applied to form textured surfaces that enhance light extraction efficiency in light-emitting diodes. The etch-induced shapes (trigonal prisms) on the sidewalls of concave and convex mesa patterns defined on a-plane GaN films exhibited an alignment towards the [0001Ì
] direction. An etch-rate vector model that includes one fast etching direction and two etching directions normal to the fast direction was developed to explain the creation of the etch-induced trigonal prisms. The large lattice parameter along with [0001Ì
] and single dangling bond of a-plane surface supply enough space for attack of OHâ ions, which is confirmed by XPS analysis that indicates the increased hydroxide spectra on a-plane after KOH etching and these are the reason for different etch rate and formation of trigonal prisms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 108-112
Journal: Journal of Crystal Growth - Volume 456, 15 December 2016, Pages 108-112
نویسندگان
Younghun Jung, Soohwan Jang, Kwang Hyeon Baik, Hong-Yeol Kim, Jihyun Kim,