کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491657 | 1525124 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tight binding calculation of tunneling conductance of a metal/ferromagnetic junction
ترجمه فارسی عنوان
محاسبه دقیق اتصال تونل زنی یک اتصال فلزی / فرومغناطیسی
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کلمات کلیدی
یک اتصال فلزی / فرومغناطیسی، تطابق تقریبی نزدیک، هدایت تونل، مدل مشبک
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
A tight binding approximation was used to describe the electronic properties of a metal/ ferromagnetic junction in a one-dimensional system. The appropriate boundary conditions were calculated to describe the quality of the interface, the non-spin-flip and spin-flip scattering potential. The BTK model was used to compute the reflection and transmission probabilities, and the Landauer formulation was used to calculate the conductance spectrum. It was found that the conductance spectrum changes slope at the bias voltage that reached the bottom of the minority band and the top of the majority band of the ferromagnetic. The conductance spectrum was suppressed for all energies when either the non-spin-flip or spin-flip scattering at the interface increased. However, the conductance spectrum can be enhanced when the interface was taken into account for the appropriate value of the spin-flip and non-spin-flip scattering. In addition, the conductance can be increased by increasing the next-nearest neighbor hopping energy in the ferromagnetic material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 525, 15 November 2017, Pages 7-11
Journal: Physica B: Condensed Matter - Volume 525, 15 November 2017, Pages 7-11
نویسندگان
Aek Jantayod,