Effect of Pb doped on thermal stability and electrical transport properties of single crystalline β-Zn4Sb3

In this study, we report the effect of Pb doping on both thermal stability and electrical transport properties of the single crystalline β-Zn4Sb3，prepared based on the initial stoichiometric ratios of Zn4-xSb3PbxSn3 (x = 0, 0.2, 0.4, 0.6 and 0.8). All samples possess a metallic luster surface and hardly defects and pores. The TG-DSC results show that the Pb doping samples exhibit an excellent thermal stability. Electrical transport properties of the samples were optimized by Pb doping. Among all samples exhibit p-type conduction with carrier concentrations varying from 4.88 × 1019 to 14.29 × 1019 cm−3, as carrier mobility changes from 31.1 to 66.4 cm2 V−1 s−1 at room temperature. With the increase of Pb initial content, Seebeck coefficient increases and electrical conductivity decreases. The sample with Pb initial content x = 0.6 exhibits an excellent electrical properties, and obtains maximum power factor of 1.69 × 10−3 W m−1 K−2 at 390 K.