کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491737 | 1525126 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Room temperature ferromagnetism in low dose ion implanted counter-doped Ge:Mn, As
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
We demonstrate room-temperature ferromagnetism in germanium counter-doped with manganese and arsenic at concentrations up to approximately 2.1 Ã 1020Â at/cm3: these values are one order of magnitude lower than those at which ferromagnetic behavior has previously been observed. Synthesis proceeded by ion implantation at 513Â K followed by annealing in argon at 673Â K. High resolution TEM, STEM, and EDX show single-phase diamond cubic material lacking Mn or As precipitates. These findings are consistent with the prediction of Chen et al. that counter-doping with approximately equal concentrations of a single-electron donor permits Mn, a two-electron acceptor, to be incorporated at high enough concentrations to yield a diluted magnetic semiconductor with a Curie temperature above room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 523, 15 October 2017, Pages 1-5
Journal: Physica B: Condensed Matter - Volume 523, 15 October 2017, Pages 1-5
نویسندگان
M. Donarelli, O. Kazakova, L. Ortolani, V. Morandi, G. Impellizzeri, F. Priolo, M. Passacantando, L. Ottaviano,