کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491745 | 1525126 | 2017 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication and characterization of Cu2ZnSnS4 thin films by sputtering a single target at different temperature
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
Cu2ZnSnS4(CZTS) thin films were directly deposited by sputtering with a single target at different temperatures, compared with the sulfurization process after sputtering the metal precursor, which is not only simplified the preparation process also the obtained CZTS thin film had good crystallinity with large grain size and dense morphology. The solar cell fabricated with the CZTS thin film sputtered at an optimized temperature of 500 °C shows a conversion efficiency of 1.87% with Voc = 580 mV, Jsc = 8.47 mA/cm2, and FF = 37.8%, its band gap energy is found to be 1.52 eV. These results show that the process without sulfurization is suitable for the growth of kesterite CZTS solar cell absorbers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 523, 15 October 2017, Pages 62-66
Journal: Physica B: Condensed Matter - Volume 523, 15 October 2017, Pages 62-66
نویسندگان
Qichen Zhao, Ruiting Hao, Sijia Liu, Min Yang, Xinxing Liu, Faran Chang, Yilei Lu, Shurong Wang,