Magnetic field-induced bipolar resistive switching and negative differential resistance in (110)SrTiO3:Nb/ZnO heterojunctions

(110)SrTiO3:Nb (NSTO)/ZnO heterojunctions were fabricated by magnetron sputtering. The NSTO/ZnO heterojunctions exhibit a typical rectification characteristic, and two attendant behaviors of bipolar resistive switching and negative differential resistance appear after applying a magnetic field. The ideality factor (n) increases from 3.0 to 8.8 and the density of interface state Nss increases from 8.4×1013 to 1.8×1014 eV−1·cm−2 after applying a magnetic field. The variance of interface state density can be used to qualitatively understand the above results.