کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491786 | 1525128 | 2017 | 41 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Semi-empiric theory of electron-hole pair confined in thin GaAs/Ga(Al)As layer
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We propose a simple theoretical method for analyzing spectral properties of excitons confined in thin semiconductor layers with different morphologies. By using model with a smooth energy misalignment between the energy band edges potential in junctions of a thin layer GaAs/Ga(Al)As heterostructure, we find interpolation formulae, which relate the electron and the heavy-hole adiabatic potentials with the local thickness of the layer. We present results of calculation of the exciton energies in uniform and non-uniform GaAs/Ga(Al)As quantum dots and rings, which are in a good accordance with the spectral features of excitons experimentally detected before in these structures. Our method should be applicable to wide range of problems, related to few carriers confined in quantum dots, for which any rigorous approach requires an extensive numerical work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 521, 15 September 2017, Pages 84-92
Journal: Physica B: Condensed Matter - Volume 521, 15 September 2017, Pages 84-92
نویسندگان
L.F. Garcia, J.H. Marin, I.D. Mikhailov,