کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491845 | 1525125 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Threshold energy reduction for carrier multiplication in Si-QDs by phosphorus doping
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Threshold energy reduction for carrier multiplication in Si-QDs by phosphorus doping Threshold energy reduction for carrier multiplication in Si-QDs by phosphorus doping](/preview/png/5491845.png)
چکیده انگلیسی
The Si-QDs/SiO2 multilayer films with phosphorus (P) doping have been prepared, and carrier multiplication effect of the films with and without P doping was investigated by relative quantum yield of photoluminescence (PL). The relative quantum yield of PL shows a step like increase when the excitation energy is larger than 2Eg of Si-QDs, and the carrier multiplication is caused by space-separated quantum cutting in adjacent QDs. The PL peak shifts toward high energy region after P-doping, and the PL intensity is enhanced, however, the threshold energy for carrier multiplication is decreased from 2.97 to 2.89Â eV. The results suggest that non-radiative recombination at the surface of Si-QDs is suppressed by P passivation, and radiative recombination from conduction band to surface defect level is possible. Energy transfer from hot electron-hole pair to surface defect level leads to the optical excitation of defect level, which generates an extra electron-hole pair, and carrier multiplication effect is observed in the P-doped multilayer film with lower excitation energy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 524, 1 November 2017, Pages 104-108
Journal: Physica B: Condensed Matter - Volume 524, 1 November 2017, Pages 104-108
نویسندگان
Xinzhan Wang, Yanmei Xu, Haixu Liu, Wanbing Lu, Wei Yu, Guangsheng Fu,