کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491915 | 1525129 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The evidence of bound solitons delocalization in o-TaS3 under dc bias from sum rule
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The evidence of bound solitons delocalization in o-TaS3 under dc bias from sum rule The evidence of bound solitons delocalization in o-TaS3 under dc bias from sum rule](/preview/png/5491915.png)
چکیده انگلیسی
The electric field dependence of the dielectric properties below 50 K along the chain direction of o-TaS3 has been investigated. Under a dc bias field exceeding the lower threshold Eâ²T, the real part of dielectric constant ϵ1(Ï) decreases possibly due to the decreasing concentration of bound solitons. We propose that the delocalization of bound solitons with the increasing applied electric field could be used to explain the reduction of ϵ1(Ï) and the enhancement of the dc conductivity. This has also been confirmed by the quantitative comparison between the enhancement of the dc conductivity and the change of the dielectric spectral weight.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 520, 1 September 2017, Pages 148-151
Journal: Physica B: Condensed Matter - Volume 520, 1 September 2017, Pages 148-151
نویسندگان
Yongchang Ma, Yanhui Hou, Mengmeng Ma, Xuewei Wang, Cedomir Petrovic,