کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491954 | 1525130 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Layer-controlled band alignment, work function and optical properties of few-layer GeSe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Layer-controlled band alignment, work function and optical properties of few-layer GeSe Layer-controlled band alignment, work function and optical properties of few-layer GeSe](/preview/png/5491954.png)
چکیده انگلیسی
The electronic properties, such as the layer-dependent behavior of the band structure, band gap, work function alignment and dielectric properties of the few-layer GeSe are systematically investigated via gradient-corrected density functional theory computations, inspired by the experimentally observation of two-dimension materials such as graphene, phosphorene, MoS2 and BN. The results indicate that the few-layer GeSe presents a robust direct band gap, which decreases with increasing the thickness from bilayer (1.15Â eV) to six-layer (1.00Â eV) around the X point. Furthermore, the work function increases rapidly from monolayer (4.44Â eV) to trilayer (4.95Â eV). The robust direct band gap characteristics and the layer-dependent band gap suggest that the few-layer GeSe is a promising material for efficient solar energy harvesting applications. The layer dependence of the GeSe work function offers a practical route to tune the Schottky barrier in GeSe based electronic devices. Our results provide new insights on utilizing the layer-controlled band gap of the atomic layers of GeSe.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 519, 15 August 2017, Pages 90-94
Journal: Physica B: Condensed Matter - Volume 519, 15 August 2017, Pages 90-94
نویسندگان
Xiufeng Song, Wenhan Zhou, Xuhai Liu, Yu Gu, Shengli Zhang,