Low temperature time resolved photoluminescence in ordered and disordered Cu2ZnSnS4 single crystals

In this work we performed time-resolved micro-photoluminescence (TRPL) studies of Cu2ZnSnS4 (CZTS) single crystals grown in molten KI salt. The order/disorder degree of CZTS was varied by the thermal post treatment temperature. Photoluminescence spectra measured at T=8 K showed an asymmetric band with a peak position of 1.33 eV and 1.27 eV for partially ordered and disordered structures, respectively. Thermal activation energies were found to be ET (PO) =65±9 meV for partially ordered and ET (PD) =27±4 meV for partially disordered. These low activation energy values indicating to the defect cluster recombination model for both partially ordered and disordered structures. TRPL was measured for both crystals and their decay curves were fitted with a stretched exponential function, in order to describe the charge carriers' recombination dynamics at low temperature.