کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5492142 | 1525140 | 2017 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The Cu2ZnSnS4 solar cell with high open circuit voltage
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the effects of two different sulfurization processes on the CZTS films were investigated, and the results indicated that a rapid high-temperature crystallization process after sulfurization was beneficial for CZTS thin films to obtain a compact and flat surface with large grains. However, a common sulfurization without rapid high-temperature crystallization process would easily lead to undesirable properties of films, such as rough surface with pin holes, which degenerate the performance of devices. Cu2ZnSnS4 (CZTS) solar cell based on a rapid high-temperature process after sulfurization achieved a high open circuit voltage of 722Â mV and the best efficiency 3.32% was obtained.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 509, 15 March 2017, Pages 50-54
Journal: Physica B: Condensed Matter - Volume 509, 15 March 2017, Pages 50-54
نویسندگان
Min Yang, Xun Ma, Zhi Jiang, Zhishan Li, Sijia Liu, Yilei Lu, Shurong Wang,