کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
583420 | 1453173 | 2008 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Defluoridation chemistry of synthetic hydroxyapatite at nano scale: Equilibrium and kinetic studies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
بهداشت و امنیت شیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Defluoridation chemistry of synthetic hydroxyapatite at nano scale: Equilibrium and kinetic studies Defluoridation chemistry of synthetic hydroxyapatite at nano scale: Equilibrium and kinetic studies](/preview/png/583420.png)
چکیده انگلیسی
This study describes the advantages of nano-hydroxyapatite (n-HAp), a cost effective sorbent for fluoride removal. n-HAp possesses a maximum defluoridation capacity [DC] of 1845 mg Fâ/kg which is comparable with that of activated alumina, a defluoridation agent commonly used in the indigenous defluoridation technology. A new mechanism of fluoride removal by n-HAp was proposed in which it is established that this material removes fluoride by both ion-exchange and adsorption process. The n-HAp and fluoride-sorbed n-HAp were characterized using XRD, FTIR and TEM studies. The fluoride sorption was reasonably explained with Langmuir, Freundlich and Redlich-Peterson isotherms. Thermodynamic parameters such as ÎG°, ÎH°, ÎS° and Ea were calculated in order to understand the nature of sorption process. The sorption process was found to be controlled by pseudo-second-order and pore diffusion models. Field studies were carried out with the fluoride containing water sample collected from a nearby fluoride endemic area in order to test the suitability of n-HAp material as a defluoridating agent at field condition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Hazardous Materials - Volume 155, Issues 1â2, 30 June 2008, Pages 206-215
Journal: Journal of Hazardous Materials - Volume 155, Issues 1â2, 30 June 2008, Pages 206-215
نویسندگان
C. Sairam Sundaram, Natrayasamy Viswanathan, S. Meenakshi,