Multi-asperity nanotribological behavior of single-crystal silicon: Crystallography-induced anisotropy in friction and wear

► Friction and wear of polished Si(1 1 1) are strongly reduced compared to Si(1 0 0) ones. ► This crystallography-induced anisotropy (CA) is only observed in multi-asperity contact. ► CA does not appear in FFM: a minimum density of atoms in interaction is necessary. ► CA is controlled by both surface energy and in-plane strength of wafers. ► CA depends on the roughness of wafers which controls the seizure occurrence.